The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2026

Filed:

Dec. 10, 2024
Applicant:

Horiba Stec Co., Ltd., Kyoto, JP;

Inventor:

Terry R. Turner, Austin, TX (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32128 (2013.01); H01J 37/32183 (2013.01); H01J 37/3299 (2013.01); H01J 2237/24564 (2013.01);
Abstract

The present disclosure provides a RF power delivery method for delivering the RF power to a plasma load in a microelectronic manufacturing environment. The RF power delivery method includes generating a harmonically distorted sinusoidal waveform. Such harmonically distorted sinusoidal waveform being derived from a predetermined harmonic signature corresponding to a desired plasma state. Next, the method includes amplifying the harmonically distorted sinusoidal waveform and capable of operating under conditions of high reflected power. Next, the method includes interfacing with a non-linear plasma load impedance. Thereafter, the method includes measuring the RF power spectrum at an output of the fixed impedance matching network, the measured spectrum being used to adjust the amplified harmonically distorted sinusoidal waveform to recreate a desired plasma state.


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