The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2026

Filed:

Sep. 20, 2023
Applicant:

Research & Business Foundation Sungkyunkwan University, Suwon-si, KR;

Inventors:

Geun Young Yeom, Seoul, KR;

Wonjun Chang, Seoul, KR;

Hee Ju Kim, Seoul, KR;

Ji Eun Kang, Yongin-si, KR;

Soo Nam Goong, Suwon-si, KR;

Jong Woo Hong, Goyang-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); G03F 7/36 (2006.01); H10P 76/20 (2026.01);
U.S. Cl.
CPC ...
H01J 37/321 (2013.01); G03F 7/36 (2013.01); H01J 37/32449 (2013.01); H10P 76/204 (2026.01); H01J 2237/334 (2013.01); H01J 2237/336 (2013.01);
Abstract

The present invention introduces a plasma etching method and apparatus. The plasma etching method may include forming a photoresist pattern on a target etching layer, hardening the surface of the photoresist pattern by exposing to a first plasma generated from a first discharge gas containing a reforming gas including carbon (C) and sulfur (S) and sequentially annealing, and etching the target etching layer with a second plasma generated from a second discharge gas using the surface-hardened photoresist pattern as a mask.


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