The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
Nov. 08, 2023
Applicant:
Veeco Instruments Inc., Plainview, NY (US);
Inventors:
Mohammad Saghayezhian, Plainview, NY (US);
Binyamin Rubin, Plainview, NY (US);
Kirill Gutsol, Plainview, NY (US);
Assignee:
VEECO INSTRUMENTS INC., Plainview, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/147 (2006.01);
U.S. Cl.
CPC ...
H01J 37/147 (2013.01);
Abstract
An in situ cleansing of grids of an ion beam system, such as a deposition and/or etching system, that includes applying a negative bias on the downstream-most grid and etching redeposited material from the grid. Any or all of the chamber pressure of the system, the extraction current in the ion beam source, the beam divergence, and perveance can be adjusted with the deceleration grid bias. The methods of this disclosure can be applied to any gridded ion source systems, including those with an assist ion beam.