Semiconductor device and method of fabricating the same

Abstract

A method of fabricating a semiconductor device may include designing a layout including first and second gate patterns, first and second dummy gate patterns, and third and fourth gate patterns sequentially arranged in a first direction; forming first to fourth sacrificial patterns and first and second dummy sacrificial patterns, which correspond to the first to fourth gate patterns and the first and second dummy gate patterns respectively, on a substrate using a photomask manufactured based on the layout; and performing an optical proximity correction on the layout. The optical proximity correction may include measuring distances between adjacent ones of the sacrificial and dummy sacrificial patterns in the first direction to provide measured distances, comparing a mean value of the measured distances with a mean value of target distances to obtain a first distance therebetween, and reducing a distance between the first and second dummy gate patterns by the first distance.