The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2026

Filed:

Jan. 04, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Ala Moradian, Sunnyvale, CA (US);

Vishwas Kumar Pandey, Madhya Pradesh, IN;

Lori D. Washington, San Jose, CA (US);

Miao-Chun Chen, Sunnyvale, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/24 (2006.01); C23C 16/52 (2006.01);
U.S. Cl.
CPC ...
C23C 16/24 (2013.01); C23C 16/52 (2013.01);
Abstract

Embodiments herein provide for a method of processing a semiconductor substrate. The method described herein may include receiving a first input corresponding to a first geometric hardware configuration of a process chamber, receiving a second input corresponding to a first process recipe of the process chamber, determining, based on the first input and the second input, a first purge gas flow rate for the process chamber, measuring a deposition characteristic of the process chamber via a first sensor, determining, based on the first input, the second input, and the measured deposition characteristic, a second purge gas flow rate, the second purge gas flow rate different from the first purge gas flow rate, and flowing a purge gas at the second purge gas flow rate during a deposition process.


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