The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Jun. 08, 2023
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/367 (2006.01); H01L 21/48 (2006.01); H01L 23/373 (2006.01); H01L 23/492 (2006.01); H01L 23/495 (2006.01); H02M 7/5387 (2007.01);
U.S. Cl.
CPC ...
H01L 23/3675 (2013.01); H01L 21/4875 (2013.01); H01L 23/3735 (2013.01); H01L 23/492 (2013.01); H01L 23/4952 (2013.01); H01L 23/49562 (2013.01); H01L 23/49568 (2013.01); H02M 7/53875 (2013.01);
Abstract
Provided are a semiconductor device with a bonding strength ensured between an electrode of a semiconductor element and a terminal, and a power conversion device including the semiconductor device. A semiconductor device includes: a semiconductor element having an electrode; a substrate; a terminal; and a bonding material. The terminal has a through hole and has a step portion in the inside of the through hole. The bonding material covers the step portion in the inside of the through hole and is in contact with the electrode of the semiconductor element.