The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Jul. 17, 2023
Applicant:
Db Hitek Co., Ltd., Bucheon-si, KR;
Inventor:
Jong Won Sun, Icheon-si, KR;
Assignee:
DB HiTek Co., Ltd., Bucheon-si, KR;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10W 10/17 (2026.01); H10D 84/00 (2025.01); H10W 10/00 (2026.01); H10W 10/20 (2026.01);
U.S. Cl.
CPC ...
H10W 10/17 (2026.01); H10D 84/00 (2025.01); H10W 10/0145 (2026.01); H10W 10/021 (2026.01); H10W 10/20 (2026.01);
Abstract
Proposed is a high voltage semiconductor device and a method of manufacturing the same and, more particularly, a high voltage semiconductor device and a method of manufacturing the same, which allow the upper end of an air gap or void formed in a DTI region to be positioned relatively deep in a substrate by forming a wide region with a relatively wide lateral width on the upper part of the DTI region, thereby preventing external exposure of the air gap in a subsequent process and preventing foreign substances such as tungsten from remaining on the upper side of the DTI region accordingly.