The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2026

Filed:

Aug. 12, 2021
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;

Inventors:

Shunpei Yamazaki, Tokyo, JP;

Shunichi Ito, Atsugi, JP;

Yoshihiro Komatsu, Ebina, JP;

Shinobu Kawaguchi, Isehara, JP;

Shinya Sasagawa, Chigasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/477 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/477 (2013.01); H01L 21/02181 (2013.01); H01L 21/02266 (2013.01); H01L 21/0228 (2013.01); H01L 21/02345 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01);
Abstract

A semiconductor device in which variation in characteristics is small is provided. A first insulator is formed; a first insulator is formed; a conductor is formed over the first insulator; a second insulator is formed over the conductor; a third insulator is formed over the second insulator; an oxide is formed over the third insulator; first heat treatment is performed; and second heat treatment following the first heat treatment is performed. The temperature of the first heat treatment is lower than the temperature of the second heat treatment.


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