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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12635420 B1

PDFFull Text
Date of Patent:
May. 19, 2026

Filed:

Dec. 27, 2023

Magnetization rotational element and magnetoresistive effect element

Applicant:

Tdk Corporation, Tokyo, JP;

Inventor:

Tomoyuki Sasaki, Tokyo, JP;

Assignee:

TDK CORPORATION, Tokyo, JP;

Attorney:

Oliff PLC

Primary Examiner:

Michael T Tran

Int. Cl.
CPC ...
G11C 11/18 (2006.01); G01R 33/09 (2006.01); G11B 5/39 (2006.01); G11C 11/16 (2006.01); H01F 10/32 (2006.01); H03B 15/00 (2006.01); H10B 61/00 (2023.01); H10D 48/40 (2025.01); H10D 84/80 (2025.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01); H10N 52/00 (2023.01); H10N 52/01 (2023.01); H10N 52/80 (2023.01);
U.S. Cl.
CPC ...
H10N 52/00 (2023.02); G01R 33/098 (2013.01); G11B 5/39 (2013.01); G11C 11/161 (2013.01); G11C 11/1675 (2013.01); G11C 11/1697 (2013.01); G11C 11/18 (2013.01); H01F 10/32 (2013.01); H01F 10/3254 (2013.01); H01F 10/329 (2013.01); H03B 15/00 (2013.01); H03B 15/006 (2013.01); H10B 61/00 (2023.02); H10D 48/40 (2025.01); H10D 84/80 (2025.01); H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02); H10N 52/01 (2023.02); H10N 52/80 (2023.02); H01F 10/3286 (2013.01);
Abstract

This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.

Find Patent Forward Citations

Sasaki, Tomoyuki. (2026). Magnetization rotational element and magnetoresistive effect element (U.S. Patent No. 12635420). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12635420

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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