The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Jan. 22, 2024
National Technology & Engineering Solutions of Sandia, Llc, Albuquerque, NM (US);
Evan Michael Anderson, Albuquerque, NM (US);
Quinn Campbell, Albuquerque, NM (US);
Shashank Misra, Albuquerque, NM (US);
Aaron Michael Katzenmeyer, Vienna, VA (US);
Jeffrey Andrew Ivie, Rio Rancho, NM (US);
Scott William Schmucker, Albuquerque, NM (US);
Andrew David Baczewski, Albuquerque, NM (US);
National Technology & Engineering Solutions of Sandia, LLC, Albuquerque, NM (US);
Abstract
A method for creating direct band gap material from indirect band gap material, the resultant direct band gap material, and corresponding optical devices are described. The method employs atomic layer doping (ALDo) to create closely spaced δ-doped layers, alternating between n-type and p-type dopants, to modify the band structure of the indirect band gap material. The spacing between adjacent δ-doped layers is between 1 and 100 Å. The dopants may, for example, include phosphorus, boron, and/or aluminum, while the indirect band gap material may, for example, include silicon and/or germanium. The method and material may alternatively employ a single dopant for all closely spaced δ-doped layers. This single dopant may, for example, be erbium. Optical devices, including emitters and photodetectors, may be formed of the created direct band gap material. Both vertical and lateral devices may be formed.