The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Mar. 08, 2023
Samsung Display Co., Ltd., Yongin-si, KR;
Joosung Kim, Suwon-si, KR;
Younghwan Park, Suwon-si, KR;
Jinjoo Park, Suwon-si, KR;
Dongchul Shin, Suwon-si, KR;
Samsung Display Co., Ltd., Yongin-si, KR;
Abstract
A light emitting device includes a light emitting device includes: a first nitride semiconductor layer doped with an n-type dopant and having a first lattice constant; an active layer provided on the first nitride semiconductor layer and having a second lattice constant greater than the first lattice constant, the active layer including a nitride semiconductor material including indium; a stress relaxation layer interposed between the first nitride semiconductor layer and the active layer and having a third lattice constant between the first lattice constant and the second lattice constant, the stress relaxation layer including a nitride semiconductor material including indium; and a second nitride semiconductor layer provide on the active layer and doped with a p-type dopant, wherein the active layer includes: an upper active region provided on an upper surface of the stress relaxation layer, and a side active region provided on a side surface of the stress relaxation layer.