The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2026

Filed:

Dec. 09, 2022
Applicant:

Rec Solar Pte. Ltd., Singapore, SG;

Inventor:

Jan Haschke, Singapore, SG;

Assignee:

REC Solar PTE. Ltd., Singapore, SG;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 71/00 (2025.01); H10F 10/161 (2025.01); H10F 10/166 (2025.01); H10F 77/30 (2025.01);
U.S. Cl.
CPC ...
H10F 71/121 (2025.01); H10F 10/161 (2025.01); H10F 10/166 (2025.01); H10F 71/129 (2025.01); H10F 77/311 (2025.01);
Abstract

A method for manufacturing a solar cell, the method comprising providing a substrate, arranging a passivation region on a surface of the substrate and arranging a collector layer on a surface of the passivation region, the step of arranging the passivation region comprises; depositing a first passivation layer on the surface of the substrate using a first gas; and, depositing a second passivation layer onto the surface of the first passivation layer using a second gas; wherein the first and second gases each comprise hydrogen gas and a silicon-based gas, wherein the ratio of hydrogen gas to silicon-based gas of the second gas is up to 2.5, and at least 0.4, times the ratio of hydrogen gas to silicon-based gas of the first gas.


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