The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2026

Filed:

Jul. 23, 2021
Applicant:

Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;

Inventors:

Arnaud Kinfack Leoga, Grenoble, FR;

Jordi Veirman, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 71/10 (2025.01); H10F 10/166 (2025.01); H10F 71/00 (2025.01);
U.S. Cl.
CPC ...
H10F 71/103 (2025.01); H10F 10/166 (2025.01); H10F 71/1221 (2025.01); H10F 71/134 (2025.01); Y02E 10/50 (2013.01);
Abstract

A method for treating a stack, the stack including a substrate of crystalline silicon, a first passivation layer of hydrogenated amorphous silicon, disposed on a first face of the substrate; and a first layer of n-doped amorphous silicon, disposed on the first passivation layer; the method including a step of exposing the stack to electromagnetic radiation emitted by an electromagnetic radiation source, the first face of the substrate pointing to the electromagnetic radiation source, the electromagnetic radiation having at least one first wavelength of between 300 nm and 550 nm and at least one second wavelength of between 550 nm and 1100 nm.


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