The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Dec. 13, 2022
Csmc Technologies Fab2 Co., Ltd., Wuxi, CN;
Zheng Bian, Wuxi, CN;
Kui Xiao, Wuxi, CN;
Aifeng Zhao, Wuxi, CN;
Jinjie Hu, Wuxi, CN;
Tao Yang, Wuxi, CN;
CSMC TECHNOLOGIES FAB2 CO., LTD., Wuxi, CN;
Abstract
The present disclosure relates to a single-photon avalanche diode integrated with a quenching resistor and a manufacturing method thereof. The method includes: obtaining a wafer; patterning and etching a front surface of the base to form a quenching resistor trench and an isolation trench, wherein a width of the isolation trench is greater than a width of the quenching resistor trench; forming an insulation layer on an inner surface of the quenching resistor trench; depositing polycrystalline silicon on the front surface of the base, where the polycrystalline silicon is filled into the quenching resistor trench and seals the quenching resistor trench while the polycrystalline silicon is filled into the isolation trench and does not seal the isolation trench; performing oxidation treatment on the polycrystalline silicon in the isolation trench; filling a light-shielding conductive material into the isolation trench.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile