The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Feb. 24, 2023
Kabushiki Kaisha Toshiba, Tokyo, JP;
Mariko Shimizu, Setagaya Tokyo, JP;
Kazuhiro Suzuki, Meguro Tokyo, JP;
Ikuo Fujiwara, Yokohama Kanagawa, JP;
Ryoma Kaneko, Ota Tokyo, JP;
Keita Sasaki, Yokohama Kanagawa, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A light detector includes a semiconductor layer and a light-receiving element. The semiconductor layer is of a first conductivity type. The light-receiving element includes a first semiconductor region, a second semiconductor region, a third semiconductor region, and a fourth semiconductor region. The first semiconductor region is of a second conductivity type. The second semiconductor region is located between the first semiconductor region and the semiconductor layer. The second semiconductor region is of the first conductivity type and contacts the first semiconductor region. The third semiconductor region is located between the second semiconductor region and the semiconductor layer. The third semiconductor region is of the second conductivity type. The fourth semiconductor region is located between the third semiconductor region and the semiconductor layer. The fourth semiconductor region is of the first conductivity type, and has a lower first-conductivity-type impurity concentration than a first-conductivity-type impurity concentration of the semiconductor layer.