The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2026

Filed:

Aug. 09, 2024
Applicant:

Magnolia White Corporation, Tokyo, JP;

Inventors:

Toshihide Jinnai, Tokyo, JP;

Hajime Watakabe, Tokyo, JP;

Akihiro Hanada, Tokyo, JP;

Ryo Onodera, Tokyo, JP;

Isao Suzumura, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 86/40 (2025.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); H10D 30/67 (2025.01); H10D 86/60 (2025.01); H10K 59/131 (2023.01); H10K 59/80 (2023.01);
U.S. Cl.
CPC ...
H10D 86/423 (2025.01); G02F 1/136227 (2013.01); G02F 1/136286 (2013.01); G02F 1/1368 (2013.01); H10D 30/6745 (2025.01); H10D 86/441 (2025.01); H10D 86/60 (2025.01); H10K 59/131 (2023.02); H10K 59/80515 (2023.02); H10K 59/80521 (2023.02); G02F 2201/123 (2013.01);
Abstract

A display device including a substrate having a first TFT of an oxide semiconductor and a second TFT of a polysilicon semiconductor comprising: the oxide semiconductor is covered by a first insulating film, a first drain electrode is connected to the oxide semiconductor via a first through hole formed in the first insulating film, a first source electrode is connected to the oxide semiconductor via second through hole formed in the first insulating film in the first TFT, a second insulating film is formed covering the first drain electrode and the first source electrode, a drain wiring connects to the first drain electrode via a third through hole formed in the second insulating film, a source wiring is connected to the first source electrode via a fourth through hole formed in the second insulating film.


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