The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2026

Filed:

Sep. 28, 2023
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Ravi Pramod Kumar Vedula, San Diego, CA (US);

Abhijeet Paul, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 86/00 (2025.01); H10D 86/01 (2026.01);
U.S. Cl.
CPC ...
H10D 86/201 (2025.01); H10D 86/01 (2025.01);
Abstract

An integrated circuit (IC) device is described. The IC device includes a semiconductor-on-insulator (SOI) substrate having a first-type diffusion region. The IC device also includes a first, first-type transistor on the first-type diffusion region. The IC device further includes a second, first-type transistor on the first-type diffusion region. The IC device also includes a first, second-type implant region. The first, second-type implant region includes a gate overlap region partially overlapped with a gate region of the second, first-type transistor to provide a body contact of the second, first-type transistor and to couple a source region of the second, first-type transistor to a drain region of the first, first-type transistor in series.


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