The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Jul. 05, 2022
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Chen Zhang, Guilderland, NY (US);
Tenko Yamashita, Schenectady, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01); H10D 88/00 (2025.01);
U.S. Cl.
CPC ...
H10D 84/856 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 64/017 (2025.01); H10D 84/0167 (2025.01); H10D 84/038 (2025.01); H10D 88/01 (2025.01);
Abstract
A stacked FET architecture includes isolated pockets for replacement metal gates for top and bottom nanosheet field-effect transistors. Different work function metals are employed for the metal gates of n-type and p-type FETs. The architecture allows flexibility in providing electrically connected or unconnected metal gates.