The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Jul. 05, 2023
Renesas Electronics Corporation, Tokyo, JP;
Takahiro Ohara, Tokyo, JP;
Koichi Arai, Tokyo, JP;
Yasunori Yamashita, Tokyo, JP;
Hideyuki Yashima, Tokyo, JP;
Renesas Electronics Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor substrate, a first insulating film formed on an upper surface of the semiconductor substrate in an outer peripheral region so as to surround a cell region in plan view, and a resistive element formed on the first insulating film so as to surround the cell region in plan view. A second insulating film having a thickness thinner than that of the first insulating film is formed on the upper surface of the semiconductor substrate in the outer peripheral region. A dummy pattern is formed from a portion over the second insulating film to a portion over the first insulating film so as to cover a step occurring between the second insulating film and the first insulating film.