The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Feb. 18, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A structure includes a gate stack over a semiconductor region, a source/drain region on a side of the gate stack, a contact etch stop layer over a part of the source/drain region, an inter-layer dielectric over the contact etch stop layer, a silicide region over the source/drain region, a source/drain contact plug over and contacting the silicide region, and an isolation layer encircling the source/drain contact plug. In a top view of the source/drain contact plug, the source/drain contact plug is elongated, and the isolation layer includes an end portion at an end of the source/drain contact plug, and a middle portion between opposing ends of the source/drain contact plug. An end-portion thickness of the end portion is greater than a middle-portion thickness of the middle portion.