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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12635215 B1

PDFFull Text
Date of Patent:
May. 19, 2026

Filed:

Jul. 11, 2023

Semiconductor device including multi-bridge channel field effect transistor and multiple via structure

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sang Shin Jang, Suwon-si, KR;

Jong Min Baek, Suwon-si, KR;

Sun Ki Min, Suwon-si, KR;

Na Rae Oh, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Attorney:

Wolf, Greenfield & Sacks, P.C.

Primary Examiner:

Changhyun Yi

Int. Cl.
CPC ...
H10D 64/23 (2025.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 64/251 (2025.01); H01L 23/481 (2013.01); H01L 23/5226 (2013.01); H10D 84/83 (2025.01);
Abstract

A semiconductor device including a lower insulating layer, a field insulating layer on the lower insulating layer, an upper insulating layer on the field insulating layer, a first through via in the upper insulating layer, a second through via in the field insulating layer, and a third through via in the lower insulating layer. The second through via is connected to the first and third through vias, a width of a top surface of the second through via is greater than a width of a bottom surface of the first through via, a width of a bottom surface of the second through via is greater than a width of a top surface of the third through via, and a width of a middle portion of the second through via is greater than the widths of the top surface and the bottom surface of the second through via.

Find Patent Forward Citations

Jang, Sang. (2026). Semiconductor device including multi-bridge channel field effect transistor and multiple via structure (U.S. Patent No. 12635215). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12635215

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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