Method of forming a semiconductor device

Abstract

In one aspect, a method of forming a semiconductor device including a plurality of stacked transistor devices having a bottom transistor device and a top transistor device can include: forming a plurality of parallel fin structures on a substrate; forming a sacrificial gate across the fin structures; forming bottom source/drain bodies for each bottom transistor device by epitaxy; forming a bottom dummy contact layer covering the bottom source/drain bodies; forming top source/drain bodies for each top transistor device over the bottom dummy contact layer by epitaxy; depositing an insulating material over the bottom dummy contact layer and the top source/drain bodies; replacing the sacrificial gate with a functional gate stack by a replacement metal gate process; patterning holes extending through the insulating material, with each hole exposing an upper surface portion of the bottom dummy contact layer; replacing the bottom dummy contact layer with one or more contact metals, which can include etching the dummy material via the holes and thereafter depositing the one or more contact metals via the holes; and etching cuts through the contact metal via the holes.