The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2026

Filed:

Jun. 23, 2022
Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventor:

Kosuke Uchida, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/78 (2006.01); H10D 30/66 (2025.01); H10D 62/832 (2025.01);
U.S. Cl.
CPC ...
H10D 62/8325 (2025.01); H10D 30/665 (2025.01);
Abstract

A silicon carbide semiconductor device includes a first passivation film formed on gate and source pads on a principal surface of a silicon carbide substrate, and a second passivation film formed on the first passivation film. The first passivation film includes a first interlayer insulation between the gate and source pads, a first opening exposing the gate pad and having a first edge, and a second opening exposing the source pad and having a second edge. First and second plating film are formed on the gate and source pads inside the first and second openings, respectively. The second passivation film is also formed on the first and second plating films, and includes a second interlayer insulation covering the first interlayer insulation, a third opening exposing the first plating film and having a third edge, and a fourth opening exposing the second plating film and having a fourth edge.


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