The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Mar. 28, 2023
Lg Display Co., Ltd., Seoul, KR;
Hanyang University Industry-university Cooperation Foundation, Seoul, KR;
Jungseok Seo, Paju-si, KR;
Jin Seong Park, Paju-si, KR;
Jaeyoon Park, Paju-si, KR;
Ki Lim Han, Paju-si, KR;
Taewon Hwang, Paju-si, KR;
Won-Bum Lee, Paju-si, KR;
LG Display Co., Ltd., Seoul, KR;
Abstract
A thin film transistor substrate and a display apparatus including the same includes a substrate; an active layer and a gate electrode on the substrate, the active layer and gate electrode being spaced apart from each other vertically; a gate insulating film including a first gate insulating film and a second gate insulating film provided between the active layer and the gate electrode; and a source electrode and a drain electrode, each of the source electrode and the drain electrode connected to the active layer. The first gate insulating film is provided closer to the gate electrode than the second gate insulating film, a dielectric constant of the first gate insulating film is higher than a dielectric constant of the second gate insulating film, and a hydrogen content of the first gate insulating film is lower than a hydrogen content of the second gate insulating film.