The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Nov. 22, 2023
Applicants:
Hyundai Motor Company, Seoul, KR;
Kia Corporation, Seoul, KR;
Inventors:
Dae Hwan Chun, Suwon-si, KR;
Junghee Park, Suwon-si, KR;
Jungyeop Hong, Seoul, KR;
Taehyun Kim, Suwon-si, KR;
Youngkyun Jung, Seoul, KR;
Nackyong Joo, Suwon-si, KR;
Assignees:
HYUNDAI MOTOR COMPANY, Seoul, KR;
KIA CORPORATION, Seoul, KR;
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/62 (2025.01); H10D 62/80 (2025.01); H10D 99/00 (2025.01);
U.S. Cl.
CPC ...
H10D 30/62 (2025.01); H10D 62/80 (2025.01); H10D 99/00 (2025.01);
Abstract
A semiconductor device includes a substrate, a buffer layer on the substrate, an n− type epitaxial layer extending upward from the buffer layer in one direction, and having a fin channel, a p type layer disposed on the buffer layer and surrounding the side and upper surfaces of the n− type epitaxial layer, a gate insulating layer on the p type layer, and a gate electrode on the gate insulating layer.