The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Mar. 09, 2023
Qorvo Us, Inc., Greensboro, NC (US);
Subrata Halder, Greensboro, NC (US);
Corey A. Nevers, Hillsboro, OR (US);
Qorvo US, Inc., Greensboro, NC (US);
Abstract
A transistor is disclosed having a substrate, a device layer disposed over the substrate, a gate electrode disposed over the device layer, and a drain electrode disposed over the substrate and spaced from the gate electrode. A first source electrode is disposed over the substrate opposite the drain electrode and spaced from the gate electrode. A second source electrode is disposed over the substrate spaced from the drain electrode opposite the gate electrode. A dielectric is disposed over the device layer, the gate electrode, and the drain electrode between the first source electrode and the second source electrode. A conductive interconnect couples the first source electrode and the second electrode and extends over the dielectric. The conductive interconnect comprises a shield wall that extends from the conductive interconnect into the dielectric between the gate electrode and the drain electrode with a distal end that is spaced above the device layer.