The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Jul. 15, 2021
Applicant:
Pusan National University Industry—university Cooperation Foundation, Busan, KR;
Inventors:
Ho Jun Lee, Busan, KR;
Jee Hun Jeong, Cheonan-si, KR;
Sang Woo Kim, Pohang-si, KR;
Min Seok Jang, Busan, KR;
O Gyun Seok, Busan, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 12/01 (2025.01); H10D 62/832 (2025.01); H10P 30/22 (2026.01); H10P 95/00 (2026.01);
U.S. Cl.
CPC ...
H10D 12/031 (2025.01); H10D 62/8325 (2025.01); H10P 30/22 (2026.01); H10P 95/062 (2026.01);
Abstract
A self-aligning process method and a self-aligning process apparatus for reducing critical dimension variation of a SiC trench gate MOSFET structure are disclosed.
Lee, Ho. (2026). Self-aligning process method and self-aligning process apparatus for reducing critical dimension variation of sic trench gate mosfet structure (U.S. Patent No. 12635156). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12635156
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile