The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Dec. 06, 2022
SK Hynix Inc., Icheon, KR;
University-industry Cooperation Group of Kyung Hee University, Yongin, KR;
SK hynix Inc., Icheon, KR;
University-Industry Cooperation Group of Kyung Hee University, Yongin, KR;
Abstract
A method for forming a thin film structure may include providing a TiN member, forming a MoOthin film on the TiN member by using a first ALD (atomic layer deposition) process using ozone (O) as a reactant, and forming a TiOthin film having a rutile crystal structure on the MoOthin film by using a second ALD process. The MoOthin film may have a thickness of about 10 nm or less. A TiOelement layer may be further formed between the TiN member and the MoOthin film. The TiOelement layer may have a nanodot array shape or a continuous layer structure. The TiOthin film may have a dielectric constant of 100 or more. The method of manufacturing a capacitor may further include forming a conductive material layer on the TiOthin film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile