The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Oct. 19, 2021
Applicant:
Shenzhen Newsonic Technologies Co., Ltd., Shenzhen, CN;
Inventor:
Jian Wang, Shenzhen, CN;
Assignee:
Shenzhen Newsonic Technologies Co., Ltd., Shenzhen, CN;
Primary Examiner:
Int. Cl.
CPC ...
H03H 3/02 (2006.01); H03H 9/02 (2006.01); H03H 9/13 (2006.01); H03H 9/17 (2006.01);
U.S. Cl.
CPC ...
H03H 9/173 (2013.01); H03H 3/02 (2013.01); H03H 9/02015 (2013.01); H03H 9/131 (2013.01);
Abstract
A film bulk acoustic resonator (FBAR) structure includes a bottom cap wafer, a piezoelectric layer disposed on the bottom cap wafer, a bottom electrode disposed below the piezoelectric layer, and a top electrode disposed above the piezoelectric layer. Portions of the bottom electrode, the piezoelectric layer, and the top electrode that overlap with each other constitute a piezoelectric stack. The FBAR structure further includes a lower cavity disposed below the piezoelectric stack. A projection of the piezoelectric stack is located within the lower cavity.