The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2026

Filed:

Jun. 06, 2024
Applicant:

Murata Manufacturing Co., Ltd., Nagaokakyo, JP;

Inventors:

Chihiro Shoda, Nagaokakyo, JP;

Yasuaki Shin, Nagaokakyo, JP;

Yoshihisa Okano, Nagaokakyo, JP;

Junpei Yasuda, Nagaokakyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/145 (2006.01); H03H 9/02 (2006.01); H03H 9/05 (2006.01); H03H 9/10 (2006.01); H03H 9/64 (2006.01); H03H 9/72 (2006.01);
U.S. Cl.
CPC ...
H03H 9/145 (2013.01); H03H 9/02559 (2013.01); H03H 9/059 (2013.01); H03H 9/1085 (2013.01); H03H 9/6483 (2013.01); H03H 9/725 (2013.01);
Abstract

An acoustic wave device includes a package substrate including a first main surface, and an acoustic wave element chip on the first main surface and including a piezoelectric layer including second and third main surfaces facing each other, and IDT electrodes at the second main surface on a side of the first main surface. The first main surface includes first and second sides facing each other. The second main surface a first edge portion closer to the first side than the second side, and a second edge portion facing the first edge portion. A first inter-outer peripheral edge distance between the first side and the first edge portion is longer than a second inter-outer peripheral edge distance between the second side and the second edge portion. The piezoelectric layer has a Z-axis defining a crystal axis and inclined with respect to a thickness direction of the piezoelectric layer.


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