The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Apr. 12, 2022
Applicant:
The University of Tokyo, Tokyo, JP;
Inventors:
Satoru Nakatsuji, Tokyo, JP;
Tomoya Higo, Tokyo, JP;
Assignee:
The University of Tokyo, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G11C 11/18 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01); H10N 52/80 (2023.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 11/18 (2013.01); H10B 61/22 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02); H10N 52/80 (2023.02);
Abstract
A magnetic memory element includes an antiferromagnetic layer made of a canted antiferromagnet having a magnetic order with a canted magnetic moment, and a contact layer in contact with the antiferromagnetic layer and made of a different material from the canted antiferromagnet. A roughness of an interface between the antiferromagnetic layer and the contact layer is 1.0 nm or less. A spin current flowing through the contact layer is configured to induce a torque to act on the magnetic order of the antiferromagnetic layer, thereby allowing reversal of the magnetic order.