Methods for optical proximity correction and methods of fabricating semiconductor devices using the same

Abstract

A method of fabricating a semiconductor device includes performing optical proximity correction (OPC) on a design pattern of a layout and forming a photoresist pattern on a substrate, using a photomask manufactured based on the layout corrected by the OPC. The performing of the OPC includes generating a target pattern for the design pattern, dividing the design pattern into a plurality of segments, modifying the segments to generate a correction pattern, dividing a first segment of the segments into a plurality of sub-segments, and modifying the sub-segments to generate a fine correction pattern.