The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Dec. 07, 2021
Mitsubishi Electric Corporation, Tokyo, JP;
Kosuke Kimura, Tokyo, JP;
Takashi Nagira, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
An optical semiconductor device according to the disclosure includes a first cladding layer, a quantum well active layer provided on the first cladding layer, a second cladding layer provided on the quantum well active layer and having a conductive type different from a conductive type of the first cladding layer, a heater electrode provided on the second cladding layer, a bias control circuitry configured to heat the quantum well active layer by applying bias to the heater electrode to adjust a phase of light propagating through the quantum well active layer, and a reverse bias control circuitry configured to apply reverse bias to the quantum well active layer to adjust an amplitude of the light propagating through the quantum well active layer.