The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Jul. 26, 2023
Applicant:
Commissariat À L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventor:
Bertrand Szelag, Grenoble, FR;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/13 (2006.01); G02B 6/132 (2006.01); H10F 30/223 (2025.01); H10F 71/00 (2025.01); H10F 77/122 (2025.01); H10F 77/40 (2025.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
G02B 6/132 (2013.01); H10F 30/223 (2025.01); H10F 71/121 (2025.01); H10F 77/122 (2025.01); H10F 77/413 (2025.01); G02B 2006/12061 (2013.01); G02B 2006/12123 (2013.01);
Abstract
A process for fabricating an optoelectronic device having a germanium-on-silicon photodiode coupled to an SiNwaveguide includes producing a semiconductor substrate having a semiconductor stack of thin layers configured to form segments of a semiconductor structure of the photodiode, producing a photonic substrate having the SiNwaveguide, and transferring and bonding the semiconductor substrate to the photonic substrate. The photodiode is produced by photolithography and etching of the semiconductor stack to form the semiconductor structure which is then located above the waveguide.