The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Aug. 20, 2024
Shanghai Huali Microelectronics Corporation, Shanghai, CN;
Shanghai Huali Microelectronics Corporation, Shanghai, CN;
Abstract
This application discloses a testing structure for locating a source of a plasma damage. A testing substructure corresponding to a selected metal layer includes a first MOS transistor, a first gate lead, a first antenna and a monitoring gate pad. The first gate lead is composed of a metal wire of the selected metal layer. The first antenna is connected with the first gate lead. The first gate lead is connected with a first gate conductive material layer of the first MOS transistor. The first antenna, the first gate lead and the first gate conductive material layer form a first pathway for accumulating plasma charges towards a surface of a first gate dielectric layer. The monitoring gate pad is connected with the first gate lead. This application further discloses a testing method for locating a source of a plasma damage. This application can locate the source of the plasma damage.