The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2026

Filed:

Mar. 05, 2024
Applicant:

Nec Corporation, Tokyo, JP;

Inventors:

Noriyuki Tonouchi, Tokyo, JP;

Taizo Shibuya, Tokyo, JP;

Assignee:

NEC CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01J 5/20 (2006.01); B82Y 20/00 (2011.01);
U.S. Cl.
CPC ...
G01J 5/20 (2013.01); B82Y 20/00 (2013.01);
Abstract

An object of the present invention is to provide an infrared sensor capable of efficient light-to-heat conversion by thickening the light-absorbing layer, and a method for manufacturing the same. An infrared sensor comprising: an infrared reflecting mirror; a first light-absorbing layer formed on the infrared reflecting mirror and being a polymer resin layer in which light-absorbing nanoparticles are dispersed; two electrodes formed on the first light-absorbing layer; a light-detecting part that at least partially overlaps and electrically contacts with the two electrodes; a second light-absorbing layer formed on the light-detecting part and being a polymer resin layer in which light-absorbing nanoparticles are dispersed; and a metal thin film formed on the second light-absorbing layer.


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