The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
May. 30, 2025
Applicant:
Luxium Solutions, Llc, Hiram, OH (US);
Inventors:
Assignee:
LUXIUM SOLUTIONS, LLC, Hiram, OH (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/36 (2006.01); C01G 15/00 (2006.01); C30B 15/04 (2006.01); C30B 15/30 (2006.01); C30B 15/34 (2006.01); C30B 29/16 (2006.01);
U.S. Cl.
CPC ...
C30B 15/36 (2013.01); C01G 15/00 (2013.01); C30B 15/04 (2013.01); C30B 15/30 (2013.01); C30B 15/34 (2013.01); C30B 29/16 (2013.01);
Abstract
Apparatuses and methods as described herein can be used to grow a GaObased single crystal using an Edge-defined film fed growth (EFG) method. The single gallium oxide crystal sheet can have a principal plane is offcut from a (100) crystallographic orientation. In one embodiment, the offcut is between 2 and 20 degrees. The single crystal can have a full width half mass of less than 50 arcsec.
Quick Actions:
Haven, Drew. (2026). Apparatus and method for growth of gallium oxide crystal with an offcut (U.S. Patent No. 12630941). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12630941
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile