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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12630479 B1

PDFFull Text
Date of Patent:
May. 19, 2026

Filed:

Dec. 06, 2022

Sintered material, semiconductor manufacturing apparatus including the same, and method of manufacturing the sintered material

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Changhwan Kim, Suwon-si, KR;

Takafumi Noguchi, Kanagawa, JP;

Toshihiro Iizuka, Kanagawa, JP;

Younseon Wang, Suwon-si, KR;

Kenichi Nagayama, Kanagawa, JP;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Jeffrie R Lund

Int. Cl.
CPC ...
C04B 35/553 (2006.01); C04B 35/645 (2006.01); H10P 72/76 (2026.01);
U.S. Cl.
CPC ...
C04B 35/553 (2013.01); C04B 35/645 (2013.01); C04B 2235/445 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/656 (2013.01); C04B 2235/666 (2013.01); C04B 2235/76 (2013.01); C04B 2235/77 (2013.01); C04B 2235/786 (2013.01); H10P 72/7616 (2026.01);
Abstract

Provided are a sintered material having high corrosion resistance, a method of manufacturing the sintered material, a member for a semiconductor manufacturing apparatus, a method of manufacturing a member for a semiconductor manufacturing apparatus, a semiconductor manufacturing apparatus, and a method of manufacturing a semiconductor manufacturing apparatus. The sintered material according to an embodiment includes 50 mass % or more of yttrium oxyfluoride, has a relative density of 97.0% or more, and has a Vickers hardness of 5.0 GPa or more. The method of manufacturing a sintered material according to an embodiment includes forming a molded body including yttrium oxyfluoride powder having a particle size of 0.3 μm or less, and sintering the molded body under an atmospheric pressure at a temperature of 800° C. or less.

Find Patent Forward Citations

Kim, Changhwan. (2026). Sintered material, semiconductor manufacturing apparatus including the same, and method of manufacturing the sintered material (U.S. Patent No. 12630479). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12630479

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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