The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2026

Filed:

Jul. 28, 2023
Applicant:

Industrial Technology Research Institute, Hsinchu, TW;

Inventors:

Yu-Ming Peng, Taichung City, TW;

Hsiao-Fen Wei, New Taipei City, TW;

Chih-Chia Chang, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/14 (2006.01); H01L 23/13 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/145 (2013.01); H01L 23/13 (2013.01); H01L 23/528 (2013.01); H01L 23/53204 (2013.01);
Abstract

An in-mold electronic (IME) device includes a curved substrate, a first conductive layer, a dielectric layer, a gap compensation layer, and a second conductive layer. The curved substrate has a first surface. The first conductive layer is disposed on the first surface. The dielectric layer is disposed on the first conductive layer and has a first thickness. The gap compensation layer is disposed on the first surface and connected to the dielectric layer. The gap compensation layer has a second thickness. The second conductive layer is disposed on the gap compensation layer and electrically connected to the gap compensation layer. A curvature radius of the curved substrate is c, a ratio of the second thickness to the first thickness is r, and c and r satisfy a relationship: r=(1.5−0.02c)±15%.


Find Patent Forward Citations

Loading…