The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2026
Filed:
Dec. 27, 2024
Applicant:
Tes Co., Ltd, Yongin-si, KR;
Inventors:
Assignee:
TES CO., LTD, Yongin-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 50/64 (2026.01); H10P 50/24 (2026.01); C09K 13/04 (2006.01);
U.S. Cl.
CPC ...
H10P 50/642 (2026.01); H10P 50/242 (2026.01); C09K 13/04 (2013.01);
Abstract
Disclosed is a substrate processing method for selectively etching a re-growth silicon oxide formed on a surface of a silicon oxide layer and having a density lower than a density of the silicon oxide layer. The method includes: (a) placing a substrate including the re-growth silicon oxide into a reaction chamber; and (b) supplying an etching gas into the reaction chamber to dry-etch the re-growth silicon oxide formed on the surface of the silicon oxide layer, wherein the dry-etching is performed using HF and HO as an etching gas at about 40° C. or lower.