The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2026

Filed:

Aug. 15, 2023
Applicant:

Wonik Ips Co., Ltd., Pyeongtaek-si, KR;

Inventor:

Min Su Kim, Pyeongtaek-si, KR;

Assignee:

WONIK IPS CO., LTD., Pyeongtaek-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 50/28 (2026.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H10P 50/283 (2026.01); H01J 37/3244 (2013.01); H01J 2237/3346 (2013.01);
Abstract

A substrate processing method using a substrate processing apparatus including a process chamber having a reaction space for processing a substrate including an underlayer and a multilayer pattern provided on the underlayer and formed by alternately stacking at least a plurality of first insulating layers and a plurality of second insulating layers on one another, a substrate supporter, a gas ejector, and a plasma reactor, includes a pretreatment step for forming a passivation layer by supplying, onto the substrate through the gas ejector, a pretreatment gas, and an etching step for selectively and at least partially etching the plurality of second insulating layers in a lateral direction relative to the plurality of first insulating layers by supplying, onto the substrate through the gas ejector, an etchant.


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