The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2026
Filed:
Sep. 02, 2022
Kabushiki Kaisha Toshiba, Tokyo, JP;
Tatsuo Shimizu, Shinagawa, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
A method for manufacturing a semiconductor device according to an embodiment includes forming a first mask material having a first opening on a surface of a silicon carbide layer, performing first ion implantation of forming a first carbon region by implanting carbon (C) into the silicon carbide layer using the first mask material as a mask, forming, on the surface of the silicon carbide layer, a second mask material in which both end portions in a first direction parallel to the surface have second openings disposed inside both end portions in the first direction of the first carbon region, performing second ion implantation of forming a first impurity region by implanting a first impurity into the silicon carbide layer using the second mask material as a mask, and performing heat treatment at 1600° C. or higher.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile