The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2026
Filed:
Dec. 20, 2022
Kyusang Lee, Charlottesville, VA (US);
Kyusang Lee, Charlottesville, VA (US);
Future Semiconductor Business, Inc, Charlottesville, VA (US);
Abstract
III-Nitrides epilayer(s) are grown 'remotely' on a 2D material layer, such as graphene or h-BN, aBN, or polycrystalline BN coated crystalline substrate, where the Nitride-face surface of the epilayer faces the 2D material. A small mechanical force using a 2D material-based layer transfer process is used to separate the III-Nitrides epilayer(s) at their interface with the 2D material layer. Alternatively, the III-Nitrides epilayer is removed by mechanical force from a substrate with the assistance of a first thermal release tape and an optional metal layer on the epilayer and then a second thermal release tape and/or optional metal layer, is applied to the Nitride-face of the epilayer, the first thermal release tape and first metal layer are removed, the Ga-face surface is bonded to a substrate, and the second thermal release tape is removed. The resulting Nitride-face surface of the epilayer has high quality. A HEMT may be formed using the above structures.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile