The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2026

Filed:

Sep. 29, 2022
Applicant:

Research & Business Foundation Sungkyunkwan University, Suwon, KR;

Inventors:

Hyung Koun Cho, Suwon, KR;

Dong Su Kim, Yongin, KR;

Hee Won Suh, Suwon, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); G11C 13/00 (2006.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/826 (2023.02); G11C 13/0004 (2013.01); H10B 63/82 (2023.02); H10N 70/021 (2023.02); H10N 70/231 (2023.02); H10N 70/8833 (2023.02); H10N 70/8836 (2023.02); G11C 13/0007 (2013.01); G11C 2213/15 (2013.01); G11C 2213/73 (2013.01); G11C 2213/77 (2013.01);
Abstract

An embodiment of the present disclosure provides a resistive switching memory device including: a lower electrode; an amorphous metal oxide-based first active layer positioned on the lower electrode; an amorphous metal oxide-based second active layer positioned on the first active layer; and an upper electrode positioned on the second active layer, wherein the first active layer and the second active layer are made of the same substance but are different in electrical characteristic, thereby having a voluntary compliance current characteristic and a voluntary current rectification characteristic as a single device having a stable electrical characteristic, a method of manufacturing the resistive switching memory device, and an array including the resistive switching memory device.


Find Patent Forward Citations

Cho, Hyung. (2026). Resistive switching memory device including dual active layer and array including the same (U.S. Patent No. 12628575). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12628575

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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