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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12628544 B1

PDFFull Text
Date of Patent:
May. 12, 2026

Filed:

Apr. 21, 2023

Method for manufacturing a layer of multi-cation perovskite to form photo-active layer involving slot die coating or a blade coating of wet film, and sweeping of the wet film by flow of dry air or inert gas having specified speed, and application of heat treatment to substrate

Applicant:

Commissariat À L'energie Atomique ET Aux Énergies Alternatives, Paris, FR;

Inventors:

Matthieu Manceau, Grenoble, FR;

Noëlla Lemaitre, Grenoble, FR;

Stéphane Cros, Grenoble, FR;

Mathilde Fievez, Grenoble, FR;

Assignee:

COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;

Attorney:

Oliff PLC

Primary Examiner:

Ermias T Woldegeorgis

Int. Cl.
CPC ...
H10K 30/50 (2023.01); C23C 18/02 (2006.01); H01G 9/00 (2006.01); H01G 9/20 (2006.01); H10K 71/15 (2023.01); H10K 85/30 (2023.01); H10K 85/60 (2023.01);
U.S. Cl.
CPC ...
H10K 71/15 (2023.02); C23C 18/02 (2013.01); H01G 9/0029 (2013.01); H01G 9/20 (2013.01); H10K 30/50 (2023.02); H10K 85/30 (2023.02); H10K 85/6572 (2023.02);
Abstract

A method for manufacturing a multi-cation perovskite layer, including: a) supply of a substrate having a deposition face, b) deposition of a precursor solution including precursors comprising CsX, FAY, PbZ, with X, Y and Z═I, Br, and an FACl additive, the molar ratio of cesium to lead is between approximately 4% and 22%, the molar ratio of FACl relative to lead between 0.1% and 5%, and the perovskite layer has an empirical formula of the type CsFAPb(IBr)with x between 0.04 and 0.22, y between 0 and 1 and w between 0.001 and 0.05, c) sweeping of the wet film by an inert gas to crystallize the perovskite layer, and heat treatment so that the deposition face has a temperature ranging from about 25° C. to 80° C. C at least during step b).

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