The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2026

Filed:

Jul. 10, 2024
Applicants:

Beijing Boe Technology Development Co., Ltd., Beijing, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Dong Li, Beijing, CN;

Zhuo Chen, Beijing, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/812 (2025.01); H10H 20/01 (2025.01); H10H 20/816 (2025.01); H10K 50/15 (2023.01); H10K 50/18 (2023.01);
U.S. Cl.
CPC ...
H10H 20/812 (2025.01); H10H 20/01 (2025.01); H10H 20/816 (2025.01); H10K 50/15 (2023.02); H10K 50/181 (2023.02);
Abstract

A quantum dot light emitting structure and a method for manufacturing the quantum dot light emitting structure, and an array substrate are disclosed. The quantum dot light emitting structure includes: a quantum dot light emitting layer; an electrode; and an electron transport layer located between the quantum dot light emitting layer and the electrode, the quantum dot light emitting structure further comprises an electron blocking layer located in the electron transport layer, a root-mean-square (RMS) roughness of a surface, close to the quantum dot light emitting layer, of the electron transport layer is different from a root-mean-square (RMS) roughness of a surface, away from the quantum dot light emitting layer, of the electron transport layer.


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