The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2026
Filed:
Jun. 27, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Seoul National University R&db Foundation, Seoul, KR;
Dongho Kim, Suwon-si, KR;
Howon Jang, Seoul, KR;
Jehong Oh, Uiwang-si, KR;
Kyungwook Hwang, Suwon-si, KR;
Junsik Hwang, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION, Seoul, KR;
Abstract
Provided are a method of manufacturing a micro-LED and a method of manufacturing a display apparatus to which the method is applied. In the method of manufacturing a micro-LED, a membrane formed to include a cavity is formed on a substrate, and then, a sacrificial layer that may be selectively removed by wet etching is formed on the membrane. Next, a light-emitting device is formed on the sacrificial layer, and the light-emitting device is separated from the membrane by the wet etching. In an example, an undoped semiconductor layer may further be formed between the membrane and the sacrificial layer. The sacrificial layer may include an oxide layer having the same crystal lattice structure as that of the undoped semiconductor layer. In an example, another undoped semiconductor layer may further be formed between the sacrificial layer and the light-emitting device.