The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2026

Filed:

Mar. 24, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Radwanul Hasan Siddique, Monrovia, CA (US);

Yibing Michelle Wang, Temple City, CA (US);

Mahdad Mansouree, Amherst, MA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10F 77/70 (2025.01); H04N 23/21 (2023.01); H10F 39/00 (2025.01);
U.S. Cl.
CPC ...
H10F 77/707 (2025.01); H04N 23/21 (2023.01); H10F 39/805 (2025.01); H10F 39/807 (2025.01);
Abstract

A pixel for an imaging sensor is disclosed that includes a photodetector and a metasurface. The photodetector includes a first surface and sidewalls that extend into the photodetector in a first direction from the first surface. The metasurface is formed on the first surface and includes nanostructures that bend a predetermined range of wavelengths of light at least 70 degrees in opposing angles from a direction that is substantially perpendicular to the first surface, and a standing wave pattern forms in an active region of the pixel. The predetermined range of wavelengths of light includes 700 nm to 1100 nm inclusive. In one embodiment, the pixel is a silicon-based photodetector, a thickness of the pixel in the first direction is less than or equal to 5 μm, and the pixel absorbs at least 20% of a power of the predetermined range of wavelengths of light.


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