The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2026
Filed:
Aug. 24, 2022
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Energy Systems & Solutions Corporation, Kawasaki-shi, JP;
Yuya Honishi, Saitama Saitama, JP;
Soichiro Shibasaki, Nerima Toyko, JP;
Naoyuki Nakagawa, Tokyo, JP;
Yukitami Mizuno, Tokyo, JP;
Mutsuki Yamazaki, Yokohama Kanagawa, JP;
Yasutaka Nishida, Tokyo, JP;
Kazushige Yamamoto, Yokohama Kanagawa, JP;
Taro Asakura, Tokyo, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION, Kawasaki, JP;
Abstract
A method for manufacturing a stacked thin film of an embodiment includes forming a p-electrode on a substrate, forming a film that mainly contains a cuprous oxide and/or a complex oxide of cuprous oxides on the p-electrode, and performing an oxidation treatment on the film that mainly contains the cuprous oxide and/or the complex oxide of cuprous oxides. An ozone partial pressure in the oxidation treatment is 5 [Pa] or more and 200 [Pa] or less, a treatment temperature in the oxidation treatment is 273 [K] or more and 323 [K] or less, and a treatment time in the oxidation treatment is 1 second or more and 60 minutes or less.