The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2026

Filed:

Mar. 28, 2023
Applicant:

Apple Inc., Cupertino, CA (US);

Inventors:

Ove Lyngnes, Carmel Valley, CA (US);

Paul J Gelsinger, Santa Clara, CA (US);

Yijing Chen, San Diego, CA (US);

Guocheng Shao, Palo Alto, CA (US);

Louis W Baum, Mountain View, CA (US);

Kenneth J Vampola, Los Altos, CA (US);

Avery P Yuen, Campbell, CA (US);

Assignee:

Apple Inc., Cupertino, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H10F 39/8053 (2025.01); H10F 39/18 (2025.01); H10F 39/8057 (2025.01);
Abstract

An electronic device may include an ambient light sensor or other semiconductor sensor. The sensor may produce signals in response to light incident on the electronic device and therefore incident on the sensor. In some cases, components within the electronic device, such as infrared components, or external light sources may interfere with the operation of the sensor. Therefore, the sensor may include a filter that transmits at least a portion of visible light while blocking infrared light. Because light may be incident on the electronic device from a variety of angles, a diffuser in the sensor may scatter the light into a desired angular distribution. To ensure that infrared light is blocked regardless of the angle of the incident light, the filter may include both thin-film dielectric layers and metal layers. The metal layers may be interleaved with the thin-film dielectric layers.


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